• 3D XPoint? Technology

    Turn immense amounts of data into valuable insights — in real time. With up to 1,000X lower latency and exponentially greater endurance than NAND, 3D XPoint? technology delivers game-changing performance for big data applications and transactional workloads.

    Micron X100 NVMe SSD. This solution leverages the stregnths of 3D Xpoint technology.

    Introducing the Micron X100 NVMe? SSD

    The Micron X100 NVMe™ SSD is the first solution in a family of products targeting memory and storage applications for the data center. This solution leverages the strengths of 3D XPoint™ technology, offering higher capacity and persistence over DRAM along with higher endurance and performance as compared to NAND. 
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    Breakthrough Nonvolatile Memory Technology

    The explosion of connected devices and digital services is generating massive amounts of new data. For this data to be useful, it must be stored and analyzed very quickly. 3D XPoint™ technology is an entirely new class of nonvolatile memory that can help turn immense amounts of data into valuable information in real time. With up to 1,000 times lower latency and exponentially greater endurance than NAND, 3D XPoint technology can deliver game-changing performance for big data applications and transactional workloads. Its ability to enable high-speed, high-capacity data storage close to the processor creates new possibilities for system architects and promises to enable entirely new applications.

    Micron X100 NVMe? SSD

    Learn more about the Micron? X100 NVMe SSD, Micron’s first solution based on 3D Xpoint? Technology

    3D XPoint Memory Innovations

    Cross Point Array Structure

    Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high density.

    Stackable

    The initial technology stores 128Gb per die across two stacked memory layers. Future generations of this technology can increase the number of memory layers and/or use traditional lithographic pitch scaling to increase die capacity.

    Selector

    Memory cells are written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity and reducing cost.

    Fast Switching Cell

    With a small cell size, fast switching selector, low-latency cross point array, and fast write algorithm, the cell is able to switch states faster than any existing nonvolatile memory technologies today.

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